Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• tunnelling hydrogen microscopy; scanning tunnelling microscopy; surface metrology; Introduction Novel approaches to advance integrated circuitry beyond CMOS have focused on atom scale structures and their reliable fabrication [1]. Hydrogen-terminated silicon (H–Si) surfaces are one such versatile platform

• tunnelling hydrogen microscopy (STHM) [35]. Rather than direct tip functionalization as done in nc-AFM, STHM in these original studies was achieved by leaking in a background of molecular hydrogen (≈10−9 Torr) until an H2 molecule became trapped in the tip–sample junction. Here, we achieve STHM-like

• surface. The size of the area shown in (a) is outlined in (e). (c,d) Constant current (I = 50 pA) STM topography probing empty and filled states of the surface (bias voltages indicated in the lower left of each panel). (e) Constant height STM image with a fixed bias and height. (f) Scanning tunnelling